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Power Transistors
2SD2133
Silicon NPN epitaxial planar type
Unit: mm
3.80.2
For low-frequency power amplification driver Complementary to 2SB1413 I Features
* Low collector to emitter saturation voltage VCE(sat) * Output of 15 W can be obtained by a complementary pair with 2SB1413
10.80.2
7.50.2
4.50.2
0.650.1 2.50.1
0.850.1 1.00.1 0.8 C
90
0.8 C
16.01.0
0.70.1 0.70.1 1.150.2 1.150.2
I Absolute Maximum Ratings TC = 25C
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Rating 60 50 5 1.5 1 1.5 150 -55 to +150 Unit
0.8 C
0.50.1 1 2 3 2.050.2
0.40.1
V V V A A W C C
2.50.2
2.50.2
1: Base 2: Collector 3: Emitter MT-3 (MT3 Type Package)
I Electrical Characteristics TC = 25C
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Symbol ICBO VCBO VCEO VEBO hFE1 * hFE2 hFE3 Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance Note) *: Rank classification Rank hFE1 Q 85 to 170 R 120 to 240 S 170 to 340 VCE(sat) VBE(sat) fT Cob Conditions VCB = 20 V, IE = 0 IC = 10 A, IE = 0 IC = 2 mA, IB = 0 IE = 10 A, IC = 0 VCE = 10 V, IC = 500 mA VCE = 5 V, IC = 1 A VCE = 10 V, IC = 1 mA IC = 500 mA, IB = 50 mA IC = 500 mA, IB = 50 mA VCB = 10 V, IE = -50 mA, f = 200 MHz VCB = 10 V, IE = 0, f = 1 MHz 60 50 5 85 50 35 0.2 0.85 200 11 0.4 1.2 V V MHz pF 100 340 Min Typ Max 0.1 Unit A V V V
1
2SD2133
PC T a
2.0 Without heat sink 1.2 Ta=25C IB=10mA 9mA 1.0 8mA 7mA 1.0
Power Transistors
IC VCE
1.2 VCE=10V Ta=25C
IC I B
Collector power dissipation PC (W)
Collector current IC (A)
0.8
5mA 4mA
Collector current IC (A)
12
1.6
6mA
0.8
1.2
0.6 3mA 0.4
0.6
0.8
2mA
0.4
0.4
0.2
1mA
0.2
0 0 20 40 60 80 100 120 140 160
0 0 2 4 6 8 10
0 0 2 4 6 8 10 12
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Base current IB (mA)
VCE(sat) IC
Collector to emitter saturation voltage VCE(sat) (V)
10 3 1 0.3 0.1 Ta=75C 0.03 Ta=-25C 0.01 Ta=25C
VBE(sat) IC
Base to emitter saturation voltage VBE(sat) (V)
IC/IB=10 100 IC/IB=10 300
hFE IC
VCE=10V
Forward current transfer ratio hFE
250
10
200
Ta=75C Ta=25C
1
Ta=-25C Ta=75C Ta=25C
150
Ta=-25C 100
0.1
50
0.003 0.001 1 3 10 30 100 300 1000
0.01 1 10 100 1000
0 1 10 100 1000
Collector current IC (mA)
Collector current IC (A)
Collector current IC (mA)
f T IE
200 30
Cob VCB
Collector output capacitance Cob (pF) Collector to emitter voltage VCER (V)
IE=0 f=1MHz Ta=25C 100
VCER RBE
IC=10mA TC=25C
Transition frequency fT (MHz)
VCB=10V 180 f=200MHz TC=25C 160 140 120 100 80 60 40 20 0 -1
25
80
20
60
15
40
10
5
20
0 -2 -3 -5 -10 -20 -30 -50 -100 1 10 100
0 0.1
0.3
1
3
10
30
100
Emitter current IE (A)
Collector to base voltage VCB (V)
Base to emitter resistance RBE (k)
2
Power Transistors
ICBO Ta
104 VCE=10V 10 3 ICP 103
2SD2133
Area of safe operation (ASO)
Single pulse TC=25C
Collector current IC (A)
1 0.3
IC
ICBO (Ta) ICBO (Ta=25C)
t=10ms
DC 0.1 0.03 0.01
102
10
0.003 1 0 20 40 60 80 100 120 140 160 0.001 0.1
0.3
1
3
10
30
100
Ambient temperature Ta (C)
Collector to emitter voltage VCE (V)
Rth(t) t
104 Without heat sink
Thermal resistance Rth(t) (C/W)
103
102
10
1
10-1 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
3
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2001 MAR

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